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4N60I - N-Channel MOSFET

Description

　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

　　This new high energy device also offers a drain-to-source diode with fast recovery time.

Features

  • Higher Current Rating.
  • Lower RDS(on).
  • Lower Capacitances.
  • Lower Total Gate Charge.
  • Tighter VSD Specifications.
  • Avalanche Energy.

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Datasheet preview – 4N60I

Datasheet Details

Part number 4N60I
Manufacturer HAOHAI
File Size 355.36 KB
Description N-Channel MOSFET
Datasheet download datasheet 4N60I Datasheet
Additional preview pages of the 4N60I datasheet.

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Full PDF Text Transcription

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4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO-252 80Pcs 4000Pcs 2.5K 5000Pcs 40000Pcs 50000Pcs 　　Description 　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. 　　This new high energy device also offers a drain-to-source diode with fast recovery time. 　　Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
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