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HMS75N12DA - N-Channel Super Trench Power MOSFET

Description

The HMS75N12DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =120V,ID =A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.9mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS75N12DA HMS75N12DA DFN5X6-8L Reel Size Tape width Quantity Absolute Maximum Rat.

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HMS75N12DA N-Channel Super Trench Power MOSFET Description The HMS75N12DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =120V,ID =A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.9mΩ (typical) @ VGS=4.
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