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HMS15N70K - 700V N-Channel MOSFET

Description

theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0.

Vsch,paRerDgcSe(oi(na)ttlyylppy.

Features

  • -15A, 700V, RDS(on) typ. = 0.3Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 43nC) D D GDS TO-220 GDS TO-220F GDS D D D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220 VDSS Drain-Source Voltage 700 ID Drain Current - Continuous (TC = 25℃) 15 - Continuous (TC = 100℃) 9.4 IDM Drain Curr.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMS15N70 700V N-Channel MOSFET
HMS15N70B 700V N-Channel MOSFET
HMS15N70D 700V N-Channel MOSFET
HMS15N70F 700V N-Channel MOSFET
HMS15N70I 700V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description This Power MOSFET is producFeeadtuurseisng H&M Semi’s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cta0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion HMS15N70K,HMS15N70I,HMS15N70 HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET Features -15A, 700V, RDS(on) typ.= 0.
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