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HM70N90D - N-Channel Trench Power MOSFET

Description

The+01' is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Features

  • VDS=70V；ID=90A@ VGS=10V； RDS(ON).

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Datasheet Details

Part number HM70N90D
Manufacturer H&M Semiconductor
File Size 582.71 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet HM70N90D Datasheet
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Full PDF Text Transcription

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N-Channel Trench Power MOSFET General Description The+01' is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=90A@ VGS=10V； RDS(ON)<5.2mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply +01' TO-263-2L top view Schematic diagram VDSS = 70V IDSS = 90A RDS(ON) = 4.
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