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HM70N75 - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The HM70N75 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Features

  • VDS=70V；ID=75A@ VGS=10V； RDS(ON).

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Datasheet Details

Part number HM70N75
Manufacturer H&M Semiconductor
File Size 454.48 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet HM70N75 Datasheet
Additional preview pages of the HM70N75 datasheet.

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N-Channel Trench Power MOSFET HM70N75 General Description The HM70N75 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=75A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply To-220 Top View Schematic Diagram VDSS = 70 V IDSS = 75 A RDS(ON) = 6.9 mΩ Package Marking and Ordering Information Device Marking Device Device Package HM70N75 HM70N75 TO-220 Reel Size - Table 1.
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