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HM60P06K - P-Channel Enhancement Mode Power MOSFET

Description

The HM60P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

  • VDS =-60V,ID =-60A RDS(ON).

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HM60P06K P-Channel Enhancement Mode Power MOSFET Description The HM60P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
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