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HM5N65F - 650V N-Channel MOSFET

Download the HM5N65F datasheet PDF. This datasheet also covers the HM5N65 variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V.
  • Low gate charge ( typical 15nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter+01+01)8QLWV VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5.
  • A - Continuous (TC = 100°C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM5N65-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HM5NC65AF 650V N-Channel COOL MOSFET HKZ
HM5NC65AP 650V N-Channel COOL MOSFET HKZ
HM50 HM50 / HM51 Series / Miniature Power Inductors BI Technologies
HM50-xxx HM50 / HM51 Series / Miniature Power Inductors BI Technologies
HM500 HM500 Series / Ac/Dc Switching Modules Artesyn Technologies

Other Datasheets by H&M Semiconductor

Part Number Description
HM5N65 650V N-Channel MOSFET
HM5N60 600V N-Channel MOSFET
HM5N60F 600V N-Channel MOSFET
HM5N60I 600V N-Channel MOSFET
HM5N60K 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
+01 / +01) +01 / +01) 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power management in portable and battery operated products. Features • 4.5A, 650V, RDS(on) = 3.
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