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HM5N65 - 650V N-Channel MOSFET

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V.
  • Low gate charge ( typical 15nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter+01+01)8QLWV VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5.
  • A - Continuous (TC = 100°C.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM5N65F 650V N-Channel MOSFET
HM5N60 600V N-Channel MOSFET
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HM5N60I 600V N-Channel MOSFET
HM5N60K 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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+01 / +01) +01 / +01) 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power management in portable and battery operated products. Features • 4.5A, 650V, RDS(on) = 3.
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