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HM4630D - N and P-Channel Enhancement Mode Power MOSFET

Description

The HM4630D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 30V,ID =5A RDS(ON) < 36mΩ @ VGS=4.5V RDS(ON) < 52mΩ @ VGS=2.5V.
  • P-Channel VDS = -30V,ID = -5A RDS(ON) < 6.5mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 4630 HM4630D DFN2X2-6L Ø180mm 8mm Absolute Maximum Ratings (TA=2.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4606 N & P-Channel Enhancement Mode Power MOSFET
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HM4630D N and P-Channel Enhancement Mode Power MOSFET Description The HM4630D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =5A RDS(ON) < 36mΩ @ VGS=4.5V RDS(ON) < 52mΩ @ VGS=2.5V ● P-Channel VDS = -30V,ID = -5A RDS(ON) < 6.5mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.
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