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HM4606B - N & P-Channel Enhancement Mode Power MOSFET

Description

The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width HM4606B HM4606B SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless.

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Datasheet Details

Part number HM4606B
Manufacturer H&M Semiconductor
File Size 566.84 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4606B Datasheet

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Full PDF Text Transcription

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HM4606B N and P-Channel Enhancement Mode Power MOSFET Description The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.
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