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HM4606D - N & P-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V RDS(ON) < 36mΩ @ VGS=4.5V.
  • P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount pack age N-channel P-channel Schematic diagram HM4606D Marking and pin assignment.

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Datasheet Details

Part number HM4606D
Manufacturer H&M Semiconductor
File Size 557.10 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4606D Datasheet

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Full PDF Text Transcription

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HM4606D N and P-Channel Enhancement Mode Power MOSFET Description The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V RDS(ON) < 36mΩ @ VGS=4.5V ● P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 65mΩ @ VGS=-4.
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