Datasheet4U Logo Datasheet4U.com

HM4618B - N & P-Channel Enhancement Mode Power MOSFET

Description

The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V N-channel P-channel Schematic diagram.
  • P-Channel VDS =-40V,ID = -7A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number HM4618B
Manufacturer H&M Semiconductor
File Size 638.59 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4618B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM4-6514-B 1024 x 4 CMOS RAM Intersil Corporation
HM4-6516-9 2K x 8 CMOS RAM Intersil Corporation
HM4-65162-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162B-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162C-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation

Other Datasheets by H&M Semiconductor

Part Number Description
HM4618 N & P-Channel Enhancement Mode Power MOSFET
HM4618A N & P-Channel Enhancement Mode Power MOSFET
HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
HM4611 N and P-Channel Enhancement Mode Power MOSFET
HM4611A N & P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V N-channel P-channel Schematic diagram ● P-Channel VDS =-40V,ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.
Published: |