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HM4618 - N & P-Channel Enhancement Mode Power MOSFET

Description

The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V.
  • P-Channel VDS = -40V,ID = -7.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram HM4618 Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width HM4618 HM4618.

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Datasheet Details

Part number HM4618
Manufacturer H&M Semiconductor
File Size 728.56 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4618 Datasheet

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Full PDF Text Transcription

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HM4618 N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V ● P-Channel VDS = -40V,ID = -7.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.
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