Datasheet4U Logo Datasheet4U.com

HM4614 - N & P-Channel Enhancement Mode Power MOSFET

Description

The +0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 40V,ID =7A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V N-channel P-channel Schematic diagram.
  • P-Channel VDS = -40V,ID = -5A RDS(ON) < 38mΩ @ VGS=-10V RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number HM4614
Manufacturer H&M Semiconductor
File Size 654.05 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4614 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM4-6514-B 1024 x 4 CMOS RAM Intersil Corporation
HM4-6516-9 2K x 8 CMOS RAM Intersil Corporation
HM4-65162-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162B-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162C-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation

Other Datasheets by H&M Semiconductor

Part Number Description
HM4614B N & P-Channel Enhancement Mode Power MOSFET
HM4611 N and P-Channel Enhancement Mode Power MOSFET
HM4611A N & P-Channel Enhancement Mode Power MOSFET
HM4611B N & P-Channel Enhancement Mode Power MOSFET
HM4611Q N And P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
+0 N and P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 40V,ID =7A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V N-channel P-channel Schematic diagram ● P-Channel VDS = -40V,ID = -5A RDS(ON) < 38mΩ @ VGS=-10V RDS(ON) <50mΩ @ VGS=-4.
Published: |