HM4611B
Description
The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
- P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Schematic diagram
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device
Device Package Reel Size
Tape width
Quantity
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
2500 units
P-Channel Unit
Drain-Source Voltage
VDS 60 -60 V
Gate-Source Voltage
VGS ±20 ±20 V
Continuous Drain Current Pulsed Drain Current (Note...
