HM4485E - MOSFET

H&M Semiconductor

General Description

The +0( uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =-35V,ID =-A RDS(ON).

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HM4485E mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4485E
Manufacturer	H&M Semiconductor
File Size	484.59 KB
Description	MOSFET
Datasheet	HM4485E Datasheet

Other Datasheets by H&M Semiconductor

Part Number	Description
HM4485	P-Channel Enhancement Mode Power MOSFET
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HM4485C	MOSFET
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HM4482	N-Channel Enhancement Mode Power MOSFET
HM4484	N-Channel Enhancement Mode Power MOSFET
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Description The +0( uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-35V,ID =-A RDS(ON) <7.2mΩ @ VGS=-10V RDS(ON) <12mΩ @ VGS=-4.