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HM4480 - N-Channel Enhancement Mode Power MOSFET

General Description

The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4482 N-Channel Enhancement Mode Power MOSFET
HM4484 N-Channel Enhancement Mode Power MOSFET
HM4485 P-Channel Enhancement Mode Power MOSFET
HM4485A P-Channel Enhancement Mode Power MOSFET
HM4485B P-Channel Enhancement Mode Power MOSFET
HM4485C MOSFET
HM4485E MOSFET
HM4486A N-Channel Enhancement Mode Power MOSFET
HM4486E N-Channel Enhancement Mode Power MOSFET
HM4487 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM4480 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ●VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.