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HM4487 - P-Channel Enhancement Mode Power MOSFET

Description

The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Features

  • VDS =-100V,ID =-4.5A RDS(ON).

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Datasheet Details

Part number HM4487
Manufacturer H&M Semiconductor
File Size 419.93 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4487 Datasheet

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Full PDF Text Transcription

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HM4487 P-Channel Enhancement Mode Power MOSFET Description The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D G General Features ● VDS =-100V,ID =-4.
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