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HM4447 - P-Channel Enhancement Mode Power MOSFET

Description

The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.

Features

  • VDS = -30V,ID = -25A RDS(ON).

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Datasheet Details

Part number HM4447
Manufacturer H&M Semiconductor
File Size 286.18 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4447 Datasheet

Full PDF Text Transcription

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Description The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.
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