HM4441 - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =-55V,ID =-5A RDS(ON).

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HM4441 p-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4441
Manufacturer	H&M Semiconductor
File Size	471.55 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4441 Datasheet

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HM4441A	N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Nov 27, 2018 |