Datasheet4U Logo Datasheet4U.com

HM4440 - N-Channel Enhancement Mode Power MOSFET

Description

The HM4440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） RDS(ON) < 77mΩ @ VGS=4.5V （Typ：55mΩ） Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Low Gate to Drain Charge to Reduce Switching Losses HM4440.

📥 Download Datasheet

Datasheet Details

Part number HM4440
Manufacturer H&M Semiconductor
File Size 390.06 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4440 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM44 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
HM4430 N-Channel 30V MOSFET VBsemi
HM4454 N-Channel 100V MOSFET VBsemi
HM4487 P-Channel 100V MOSFET VBsemi
HM4488 N-Channel 150-V MOSFET VBsemi

Other Datasheets by H&M Semiconductor

Part Number Description
HM4440A N-Channel Enhancement Mode Power MOSFET
HM4441 P-Channel Enhancement Mode Power MOSFET
HM4441A N-Channel Enhancement Mode Power MOSFET
HM4443 P-Channel Enhancement Mode Power MOSFET
HM4444 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM4440 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） RDS(ON) < 77mΩ @ VGS=4.
Published: |