Datasheet4U Logo Datasheet4U.com

HM3422A - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet preview – HM3422A

Datasheet Details

Part number HM3422A
Manufacturer H&M Semiconductor
File Size 460.58 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3422A Datasheet
Additional preview pages of the HM3422A datasheet.

📁 Similar Datasheet

  • HM3422 - N-Channel 60V MOSFET (VBsemi)
  • HM3401D - P-Channel MOSFET (VBsemi)
  • HM3407 - P-Channel MOSFET (VBsemi)
  • HM3440 - Synchronous Buck-Boost DC/DC Regulator (H&M semi)
  • HM3-6514-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-6514B-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-6514S-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-65764 - High Speed CMOS SRAM (Matra Design Semiconductor)
  • HM3-65787 - High Speed CMOS SRAM (Matra Design Semiconductor)
  • HM3-65788 - High Speed CMOS SRAM (Matra Design Semiconductor)
Other Datasheets by H&M Semiconductor
  • HM3422 - N-Channel Enhancement Mode Power MOSFET
  • HM3420 - N-Channel Enhancement Mode Power MOSFET
  • HM3420B - N-Channel Enhancement Mode Power MOSFET
  • HM3421 - P-Channel Enhancement Mode Power MOSFET
  • HM3421B - P-Channel Enhancement Mode Power MOSFET
  • HM3400 - N-Channel Enhancement Mode Power MOSFET
  • HM3400B - N-Channel Enhancement Mode Power MOSFET
  • HM3400C - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM$ N Channel Enhancement Mode MOSFET DESCRIPTION The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 FEATURE l 60V/6.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V l 60V/2.5A, RDS(ON) = 38mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23-3L package design 1.Gate 2.Source 3.
Published: |