HM3422 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS =60V,ID =3A RDS(ON).

H&M Semiconductor

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Datasheet Details

Part number	HM3422
Manufacturer	H&M Semiconductor
File Size	421.02 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3422 Datasheet
Additional preview pages of the HM3422 datasheet.

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Full PDF Text Transcription

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HM3422 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.

Published: Nov 27, 2018 |