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30V N-Channel Enhancement-Mode MOSFET 30V N MOS
VDS= 30V RDS(ON), Vgs@10V, Ids@A = 40mΩ RDS(ON), Vgs@4.5V, Ids@2.8A = 60mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
+0
Package Dimensions
SOT-23(PACKAGE)
Marking D
A6EV
G
S
REF.
A B C D E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min.
Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.15
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25 o C unless otherwise noted) 25 oC
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current
Pulsed Drain Current
ID
5.
HM3406 Datasheet
