HM2319PR - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

The HM2319PR uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.

Features

VDS = -40V,ID = -6.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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HM2319PR p-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM2319PR
Manufacturer	H&M Semiconductor
File Size	555.08 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2319PR Datasheet

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Other Datasheets by H&M Semiconductor

Part Number	Description
HM2319	P-Channel Enhancement Mode Power MOSFET
HM2319A	P-Channel Enhancement Mode Power MOSFET
HM2319D	P-Channel Enhancement Mode Power MOSFET
HM2310	N-Channel Enhancement Mode Power MOSFET
HM2310B	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The HM2319PR uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features ● VDS = -40V,ID = -6.0A RDS(ON) < 126mΩ @ VGS=-4.

Published: Jul 1, 2025 |