Datasheet4U Logo Datasheet4U.com

HM2319A - P-Channel Enhancement Mode Power MOSFET

Description

The HM2319A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.

Features

  • VDS = -40V,ID = -5.0A RDS(ON) < 34mΩ @ VGS=-10V RDS(ON) < 50mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 2319A Marking and pin assignment.

📥 Download Datasheet

Datasheet Details

Part number HM2319A
Manufacturer H&M Semiconductor
File Size 343.72 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2319A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM2310 N-Channel 60V MOSFET VBsemi
HM2301 Digital-output humidity and temperature sensor Hanwei
HM2302 Digital temperature and humidity sensor ETC
HM2302 N-Channel MOSFET VBsemi
HM2309 P-Channel 60V MOSFET VBsemi

Other Datasheets by H&M Semiconductor

Part Number Description
HM2319 P-Channel Enhancement Mode Power MOSFET
HM2319D P-Channel Enhancement Mode Power MOSFET
HM2319PR P-Channel Enhancement Mode Power MOSFET
HM2310 N-Channel Enhancement Mode Power MOSFET
HM2310B N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM2319A P-Channel Enhancement Mode Power MOSFET Description The HM2319A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features ● VDS = -40V,ID = -5.0A RDS(ON) < 34mΩ @ VGS=-10V RDS(ON) < 50mΩ @ VGS=-4.
Published: |