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HM2319 - P-Channel Enhancement Mode Power MOSFET

Description

The HM2319 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.

Features

  • VDS = -40V,ID = -A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 2319 Marking and pin assignment.

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Datasheet Details

Part number HM2319
Manufacturer H&M Semiconductor
File Size 317.46 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2319 Datasheet

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HM2319A P-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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HM2319 P-Channel Enhancement Mode Power MOSFET Description The HM2319 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features ● VDS = -40V,ID = -A RDS(ON) < 126mΩ @ VGS=-4.
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