GSM1073K
Description
GSM1073K, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
- -20V/-0.45A,RDS(ON)=650mΩ@VGS=-4.5V
- -20V/-0.35A,RDS(ON)=900mΩ@VGS=-2.5V
- -20V/-0.25A,RDS(ON)=1500mΩ@VGS=-1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protection
- SOT-723 package design
Applications
- Drivers : Relays, Solenoids, Lamps, Hammers
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Smart Phones, Pagers
Packages & Pin Assignments
GSM1073KAF (SOT-723)
Pin Description
1 Gate 2 Source 3 Drain
.gs-power. 1
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