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GSM1073K - P-Channel MOSFET

General Description

GSM1073K, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.45A,RDS(ON)=650mΩ@VGS=-4.5V.
  • -20V/-0.35A,RDS(ON)=900mΩ@VGS=-2.5V.
  • -20V/-0.25A,RDS(ON)=1500mΩ@VGS=-1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • ESD Protection.
  • SOT-723 package design.

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Datasheet Details

Part number GSM1073K
Manufacturer Globaltech
File Size 664.32 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM1073K Datasheet

Full PDF Text Transcription for GSM1073K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSM1073K. For precise diagrams, and layout, please refer to the original PDF.

GSM1073K 20V P-Channel Enhancement Mode MOSFET Product Description GSM1073K, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(O...

View more extracted text
ode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ -20V/-0.45A,RDS(ON)=650mΩ@VGS=-4.5V „ -20V/-0.35A,RDS(ON)=900mΩ@VGS=-2.5V „ -20V/-0.25A,RDS(ON)=1500mΩ@VGS=-1.

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