GSM1072KX7F
Description
GSM1072KX7F, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
- 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V
- 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.2A, RDS(ON)=800mΩ@VGS=1.8V
- 20V/0.1A, RDS(ON)=1200mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-523 package design
Applications
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Smart Phones,
Pagers
Packages & Pin Assignments
GSM1072KX7F (SOT-523)
Gate
Source
Drain
.gs-power. 1
Ordering Information
Marking Information
Part Number GSM1072KX7F
Pac...
