GSM1072KTFF
Description
GSM1072KTFF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
- 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V
- 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.65A, RDS(ON)=700mΩ@VGS=1.8V
- 20V/0.65A, RDS(ON)=1200mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- DFN1006-3L package design
Applications
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
Packages & Pin Assignments
GSM1072KTFF (DFN1006-3L)
Transparent top view
Pin
Description
Gate
Source
Drain
.gs-power. 1
Ordering Information
Part Number GSM1072KTFF
Marking...
