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GA100SICP12-227 Datasheet Silicon Carbide Junction Transistor/Schottky Diode Co-pack

Manufacturer: GeneSiC

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Datasheet Details

Part number GA100SICP12-227
Manufacturer GeneSiC
File Size 1.25 MB
Description Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Download GA100SICP12-227 Download (PDF)

Overview

GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode.

Key Features

  • 175 °C Maximum Operating Temperature.
  • Gate Oxide Free SiC Switch.
  • Optional Gate Return Pin.
  • Exceptional Safe Operating Area.
  • Integrated SiC Schottky Rectifier.
  • Excellent Gain Linearity.
  • Temperature Independent Switching Performance.
  • Low Output Capacitance.
  • Positive Temperature Coefficient of RDS,ON.
  • Suitable for Connecting an Anti-parallel Diode Advantages.
  • Compatible with Si MOSFET/IGBT Gate Driv.

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