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GA10JT06-CAL Datasheet OFF Silicon Carbide Junction Transistor

Manufacturer: GeneSiC

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Datasheet Details

Part number GA10JT06-CAL
Manufacturer GeneSiC
File Size 616.29 KB
Description OFF Silicon Carbide Junction Transistor
Download GA10JT06-CAL Download (PDF)

Overview

Die Datasheet GA10JT06-CAL Normally – OFF Silicon Carbide Junction.

Key Features

  • 210°C maximum operating temperature.
  • Gate Oxide Free SiC switch.
  • Exceptional Safe Operating Area.
  • Excellent Gain Linearity.
  • Temperature Independent Switching Performance.
  • Low Output Capacitance.
  • Positive Temperature Co-efficient of RDS,ON.
  • Suitable for connecting an anti-parallel diode VDS = RDS(ON) = ID @ 25 oC = hFE = 600 V 120 mΩ 25 A 120 Die Size = 2.10 mm x 2.10 mm Advantages.
  • Compatible with Si MOSF.

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