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2N7639-GA
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth
Package
RoHS Compliant
VDS
=
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
600 V 60 mΩ 32 A 80
D G
GDS
S
TO – 257 (Isolated Base-plate Hermetic Package)
Appli
2N7639-GA Datasheet
