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2N7635-GA - Junction Transistor

Features

  • 225°C maximum operating temperature.
  • Electrically Isolated Base Plate.
  • Gate Oxide Free SiC Switch.
  • Exceptional Safe Operating Area.
  • Excellent Gain Linearity.
  • Temperature Independent Switching Performance.
  • Low Output Capacitance.
  • Positive Temperature Coefficient of RDS,ON.
  • Suitable for Connecting an Anti-parallel Diode Package.
  • RoHS Compliant VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 425 mΩ 10 A 110 D G S TO.
  • 257 (Is.

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Datasheet Details

Part number 2N7635-GA
Manufacturer GeneSiC
File Size 1.15 MB
Description Junction Transistor
Datasheet download datasheet 2N7635-GA Datasheet

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Full PDF Text Transcription

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2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Electrically Isolated Base Plate  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Package  RoHS Compliant VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 425 mΩ 10 A 110 D G S TO – 257 (Isolated Base-plate Hermetic Package) Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Applications
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