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2N7637-GA
Normally – OFF Silicon Carbide Junction Transistor
Features
• 210°C maximum operating temperature • Electrically Isolated Base Plate • Gate Oxide Free SiC Switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Compatible with 5 V TTL Gate Drive • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs • > 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth
Package
• RoHS Compliant
VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C)
= = = =
600 V 170 mΩ 20 A 110
D G
G DS
S
TO – 257 (Isolated
2N7637-GA Datasheet
