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SSF3639C - MOSFET

This page provides the datasheet information for the SSF3639C, a member of the SSF3639C-GOOD MOSFET family.

Description

The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.

The complementary MOSFET may be used in power inverters, and other applications.

Features

  • N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package N-channel P-channel Schematic Diagram Marking and Pin Assignment SOP-8 Top View.

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Datasheet preview – SSF3639C

Datasheet Details

Part number SSF3639C
Manufacturer GOOD-ARK
File Size 310.01 KB
Description MOSFET
Datasheet download datasheet SSF3639C Datasheet
Additional preview pages of the SSF3639C datasheet.

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Full PDF Text Transcription

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SSF3639C 30V Complementary MOSFET DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.
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