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G80N04 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G80N04
Manufacturer GOFORD
File Size 1.78 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G80N04 Datasheet

General Description

The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD.

Key Features

  • VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.
  • RoHS Compliant.

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