Datasheet4U Logo Datasheet4U.com

G800N06H Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

📥 Download Datasheet

Datasheet Details

Part number G800N06H
Manufacturer GOFORD
File Size 869.92 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G800N06H Datasheet

General Description

The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G800N06H N-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 3A < 80mΩ < 85mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

More Datasheets from GOFORD

Part Number Description
G800N06 N-Channel Enhancement Mode Power MOSFET
G80N04 N-Channel Enhancement Mode Power MOSFET
G80N06 MOSFET