G800N06 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G800N06 datasheet PDF. This datasheet also includes the G800N06H variant, as both parts are published together in a single manufacturer document.

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G800N06 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G800N06H-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G800N06
Manufacturer	GOFORD
File Size	869.92 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G800N06 Datasheet

General Description

The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G800N06H N-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 3A < 80mΩ < 85mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

More Datasheets from GOFORD

Part Number	Description
G800N06H	N-Channel Enhancement Mode Power MOSFET
G80N04	N-Channel Enhancement Mode Power MOSFET
G80N06	MOSFET