G025N03T Datasheet Text
G025N03T
N-Channel Enhancement Mode Power MOSFET
Description
The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
30V 160A < 2.8mΩ < 3.8mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device G025N03T
Package TO-220
Marking G025N03T
TO-220
Packaging...