G020N03D5 Datasheet Text
N-Channel Enhancement Mode Power MOSFET
Description
The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
30V 140A < 2mΩ < 3mΩ l 100% Avalanche Tested l RoHS pliant
Application l Power switch l DC/DC converters
Schematic diagram pin assignment
Ordering Information
Device G020N03D5
Package DFN5X6-8L
Marking G020N03
DFN5X6-8L
Packaging...