G020N03T Datasheet Text
G020N03T
N-Channel Enhancement Mode Power MOSFET
Description
The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
30V 140A < 2.3mΩ < 3.5mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram
Application l Power switch l DC/DC converters
TO-220
Ordering Information
Device G020N03T
Package TO-220
Marking G020N03
Packaging...