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4N60F - 600V N-Channel MOSFET

This page provides the datasheet information for the 4N60F, a member of the 4N60 600V N-Channel MOSFET family.

Description

This Power MOSFET is produced using advanced planar stripe DMOS technology.

Features

  • 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information PART NUMBER.

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Datasheet preview – 4N60F

Datasheet Details

Part number 4N60F
Manufacturer GFD
File Size 638.46 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet 4N60F Datasheet
Additional preview pages of the 4N60F datasheet.

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    Full PDF Text Transcription

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    600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 4N60/4N60F VDSS RDS(ON) ID 600V 2.5Ω 4A Features • 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 4N60/4N60F TO-220/220F 0GFD www.goford.
    Published: |