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FGW75XS65 - Discrete IGBT

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGW75XS65 Discrete IGBT (XS-series) 650V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness Applications Uninterruptible power supply PV Power coditionner Inverter welding machine http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbol VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Max.