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FGW75N65WE - Discrete IGBT

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Part number FGW75N65WE
Manufacturer Fuji Electric
File Size 642.81 KB
Description Discrete IGBT
Datasheet download datasheet FGW75N65WE Datasheet
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Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 75mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 75A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 75A Turn-On Delay Time Rise Ti

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