FGW75N60HD - Discrete IGBT

Fuji Electric

General Description

Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal resistance characteristics Items Thermal Resistance, Junction-Ambient Thermal Resistance, IGBT Junction to Case Thermal Resista

Key Features

Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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FGW75N60HD discrete igbt by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	FGW75N60HD
Manufacturer	Fuji Electric
File Size	399.45 KB
Description	Discrete IGBT
Datasheet	FGW75N60HD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current IC@25 IC@100 ICP IF@25 IF@100 IFP Short Circuit Withstand Time tSC IGBT Max. Power Dissipation PD_IGBT FWD Max.