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SFW9Z34 - Advanced Power MOSFET

Features

  • ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! 175 C Operating Temperature ! Lower Leakage Current : 10 µA (Max. ) @ VDS = -60V ! Low RDS(ON) : 0.106 Ω (Typ. ) 1 SFW/I9Z34 BVDSS = -60 V RDS(on) = 0.14 Ω ID = -18 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current.

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Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! 175 C Operating Temperature ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Low RDS(ON) : 0.106 Ω (Typ.) 1 SFW/I9Z34 BVDSS = -60 V RDS(on) = 0.14 Ω ID = -18 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -60 -18 -12.
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