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SFW9520 - Advanced Power MOSFET

Features

  • www. datasheet4u. com n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max. ) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ. ) 1 SFW/I9520 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6.0 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Con.

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Advanced Power MOSFET FEATURES www.datasheet4u.com n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ.) 1 SFW/I9520 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6.0 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3.
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