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SFW12955 - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = -60V Low RDS(ON) : 0.22 Ω (Typ. ) 1 SFW/I2955 BVDSS = -60 V RDS(on) = 0.3Ω ID = -9.4 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuo.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Low RDS(ON) : 0.22 Ω (Typ.) 1 SFW/I2955 BVDSS = -60 V RDS(on) = 0.3Ω ID = -9.4 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * 2 O 1 O 1 O 3 O o o Value -60 -9.4 -6.
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