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ISL9N7030BLP3 - N-Channel Power MOSFET

Key Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet January2002 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. PWM Optimized Features • • • • • • Fast Switching rDS(ON) = 0.0064Ω (Typ), VGS = 10V rDS(ON) = 0.010Ω (Typ), VGS = 4.5V Qg Total 24nC (Typ), VGS = 5V Qgd (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11nC CISS (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .